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LPC1769_68_67_66_65_64_63
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 9.5 — 24 June 2014 
56 of 89
NXP Semiconductors
LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
12. Dynamic characteristics
12.1 Flash memory
 
[1]
Number of program/erase cycles.
[2]
Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash in blocks of 256 bytes.
12.2 External clock
 
[1]
Parameters are valid over operating temperature range unless otherwise specified. 
[2]
Typical ratings are not guaranteed. The values listed are at room temperature (25
C), nominal supply voltages.
 
Table 10.
Flash characteristics
T
amb
=
40
C to +85
C, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
N
endu
endurance 
10000
100000
-
cycles
t
ret
retention time
powered
10
-
-
years
unpowered
20
-
-
years
t
er
erase time
sector or multiple 
consecutive sectors
95
100
105
ms
t
prog
programming time
0.95
1
1.05
ms
Table 11.
Dynamic characteristic: external clock
T
amb
=
40
C to +85
C; V
DD(3V3)
 over specified ranges.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
f
osc
oscillator frequency
1
-
25
MHz
T
cy(clk)
clock cycle time
40
-
1000
ns
t
CHCX
clock HIGH time
T
cy(clk)
 0.4
-
-
ns
t
CLCX
clock LOW time
T
cy(clk)
 0.4
-
-
ns
t
CLCH
clock rise time
-
-
5
ns
t
CHCL
clock fall time
-
-
5
ns
Fig 16. External clock timing (with an amplitude of at least V
i(RMS)
 = 200 mV)
t
CHCL
t
CLCX
t
CHCX
T
cy(clk)
t
CLCH
002aaa907