Fairchild Semiconductor N/A 2N5551TF Ficha De Dados

© 2009 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

2N5551 / MMBT5551 Rev. 1.1.0

2 

(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T

A

 = 25°C unless otherwise noted.

Notes:
2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
3. These ratings are based on a maximum junction temperature of 150 

°C.

    These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed 
    or low-duty cycle operations.

Values are at T

A

 = 25°C unless otherwise noted.

V

CEO

Collector-Emitter Voltage

160

V

V

CBO

Collector-Base Voltage

180

V

V

EBO

Emitter-Base Voltage

6

V

I

C

Collector current - Continuous

600

mA

T

J

, T

stg

(2)

Junction and Storage Temperature

-55 to +150

°C

P

D

Total Device Dissipation

625

350

mW

Derate above 25

°C

5.0

2.8

mW/

°C

R

θJC

Thermal Resistance, Junction to Case

83.3

°C/W

R

θJA

Thermal Resistance, Junction to Ambient

200

357

°C/W