Fairchild Semiconductor N/A BC846AMTF Ficha De Dados

Códigos do produto
BC846AMTF
Página de 5
BC8
46 - 
BC850 —
 NPN Epit
axial Silicon 
T
ra
n
sis
tor
© 2011 Fairchild Semiconductor Corporation
  www.fairchildsemi.com
BC846 - BC850 Rev. B1
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage 
                 Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
0
4
8
12
16
20
0
20
40
60
80
100
I
B
 = 50
μ
A
I
B
 = 100
μ
A
I
B
 = 150
μ
A
I
B
 = 200
μ
A
I
B
 = 250
μ
A
I
B
 = 300
μ
A
I
B
 = 350
μ
A
I
B
 = 400
μ
A
 
 
I
C
[m
A]
, C
O
LLECT
OR 
CURR
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
1
10
100
1000
10
100
1000
10000
V
CE
 = 5V
 
 
h
FE
, DC 
CURRE
NT GA
IN
I
C
[mA], COLLECTOR CURRENT
1
10
100
1000
10
100
1000
10000
I
C
 = 10 I
B
V
CE
(sat)
V
BE
(sat)
 
 
V
BE
(sa
t), V
CE
(sa
t)[V]
, S
A
TU
RATI
ON VOLTA
G
E
I
C
[mA], COLLECTOR CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
V
CE
 = 2V
 
 
I
C
[m
A],
 COLLE
C
TOR C
URRENT
V
BE
[V], BASE-EMITTER VOLTAGE
1
10
100
1000
0.1
1
10
100
f=1MHz
 
 
C
ob
[pF],
 CA
PAC
ITA
NCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.1
1
10
100
1
10
100
1000
V
CE
=5V
 
 
f
T
[M
Hz]
, CURRENT
 GAI
N
-B
ANDW
ID
T
H
 PRO
DUCT
I
C
[mA], COLLECTOR CURRENT