Fairchild Semiconductor N/A BC638TA Ficha De Dados

Códigos do produto
BC638TA
Página de 5
BC638 — PNP Epit
axial Silicon T
ransisto
r
© 2009 Fairchild Semiconductor Corporation
  www.fairchildsemi.com
BC638 Rev. C3
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain
Figure 3. Base-Emitter Saturation Voltage
                Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
                
Figure 5. Collector Output Capacitance
-0
-10
-20
-30
-40
-50
-0
-100
-200
-300
-400
-500
I
B
 = - 0.2 mA
I
B
 = - 0.4 mA
I
B
 = - 0.6 mA
I
B
 = - 0.8 mA
I
B
 = - 1.0 mA
I
B
 = - 1.2 mA
I
B
 = - 1.4 mA
I
B
 = - 1.6 mA
I
B
 = - 1.8 mA
 
 
I
C
[mA
], C
O
LLECT
OR CU
RRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-1
-10
-100
-1000
10
100
1000
V
CE
 = - 2V
 
 
h
FE
, DC
 CUR
REN
T
 GA
IN
I
C
[mA], COLLECTOR CURRENT
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
I
C
 = 10 I
B
V
CE
(sat)
V
BE
(sat)
 
 
V
BE
(sat), V
CE
(s
a
t)[
V
],
 SA
T
URA
T
IO
N
 VO
L
T
A
G
E
I
C
[mA], COLLECTOR CURRENT
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1
-10
-100
-1000
V
CE
 = - 2V
 
 
I
C
[mA
], COLLE
CT
OR CUR
RE
NT
V
BE
[V], BASE-EMITTER VOLTAGE
-1
-10
-100
1
10
100
f=1MHz
 
 
C
ob
[pF
], C
A
PACITA
N
C
E
V
CB
[V], COLLECTOR-BASE VOLTAGE