Fairchild Semiconductor N/A 2N5210TFR Ficha De Dados
Códigos do produto
2N5210TFR
3
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 1.0 mA, I
B
= 0
50
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 0.1 mA, I
E
= 0
50
V
I
CBO
Collector Cutoff Current
V
CB
= 35 V, I
E
= 0
50
nA
I
EBO
Emitter Cutoff Current
V
EB
= 3.0 V, I
C
= 0
50
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 100
µ
A, V
CE
= 5.0 V
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V*
200
250
250
250
250
600
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
0.7
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 1.0 mA, V
CE
= 5.0 V
0.85
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 500
µ
A,V
CE
= 5.0 V,
f= 20 MHz
30
MHz
C
cb
Collector-Base Capacitance
V
CB
= 5.0 V, I
E
= 0, f = 100 kHz
4.0
pF
h
fe
Small-Signal Current Gain
I
C
= 1.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
250
900
NF
Noise Figure
I
C
= 20
µ
A, V
CE
= 5.0 V,
R
S
= 22 k
Ω
, f = 10 Hz to 15.7 kHz
I
C
= 20
µ
A, V
CE
= 5.0 V,
R
S
= 10 k
Ω
, f = 1.0 kHz
2.0
3.0
dB
dB
*
Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
NPN General Purpose Amplifier
(continued)
2N5210/MMBT5210