Rohm Semiconductor DTC123EUAT106 Bipolar Transistor Emitter reverse voltage U(CEO) 50 V DTC123EUAT106 Ficha De Dados
Códigos do produto
DTC123EUAT106
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMH4 / UMH4N / IMH4A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
I
C
/ I
B
= 10mA / 1mA
DC current gain
h
FE
V
CE
= 5V , I
C
= 1mA ,
Input resistance
R
1
-
Collector-emitter saturation voltage
V
CE(sat)
I
E
= 50
m
A
Collector cut-off current
I
CBO
V
CB
= 50V
Emitter cut-off current
I
EBO
V
EB
= 4V
Emitter-base breakdown voltage
BV
EBO
MHz
-
250
-
Transition frequency
f
T
*1
V
CE
= 10V, I
E
=
-
5mA,
f = 100MHz
-
7
10
13
k
W
100
250
600
m
A
-
-
0.3
V
-
-
0.5
V
-
-
0.5
m
A
5
-
-
V
Collector-emitter breakdown voltage
BV
CEO
I
C
= 1mA
V
50
-
50
-
-
-
Collector-base breakdown voltage
BV
CBO
I
C
= 50
m
A
Unit
Min.
Typ.
Max.
Parameter
Symbol
Conditions
T
j
150
°C
T
stg
-
55 to
+
150
°C
I
C(MAX.)
*1
100
mA
EMH4 / UMH4N
P
D
*2
150 (Total)
*3
mW
IMH4A
300 (Total)
*4
mW
V
CEO
50
V
V
EBO
5
V
Parameter
Symbol
Values
Unit
V
CBO
50
V
2/6
2012.06 - Rev.B