Infineon Technologies N/A BCX 69-16 PNP Case type SOT 89 I(C BCX69-16 Ficha De Dados
Códigos do produto
BCX69-16
2011-10-05
1
BCX69...
1
2
2
3
PNP Silicon AF Transistors
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCX68 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCX68 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
BCX69-10
BCX69-16
BCX69-25
BCX69-16
BCX69-25
CF
CG
CH
CG
CH
1=B
1=B
1=B
1=B
1=B
2=C
2=C
2=C
2=C
2=C
3=E
3=E
3=E
3=E
3=E
SOT89
SOT89
SOT89
SOT89
SOT89
Maximum Ratings
Parameter
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
20
V
Collector-base voltage
V
CBO
25
Emitter-base voltage
V
EBO
5
Collector current
I
C
1
A
Peak collector current, t
p
≤ 10 ms
I
CM
2
Base current
I
B
100
mA
Peak base current
I
BM
200
Total power dissipation-
T
T
S
= 114 °C
P
tot
3
W
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
R
thJS
≤ 12
K/W
1
For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)