Fairchild Semiconductor N/A KSC5502DTM Ficha De Dados

© 2000 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

KSC5502D / KSC5502DT Rev. 1.1.0

2 

Values are at

 

T

C

 = 25°C unless otherwise noted.

Electrical Characteristics 

Values are at T

C

 = 25°C unless otherwise noted.

P

C

 Collector Dissipation (T

C 

= 25

°C)

87.83

118.16

W

R

θJC

 Thermal Resistance, Junction to Case

1.42

1.06

°C/W

R

θJA

 Thermal Resistance, Junction to Ambient

111.0

62.5

°C/W

T

L

 Maximum Lead Temperature for Soldering Purpose:
 1/8 inch from Case for 5 seconds

270

°C

 BV

CBO

Collector-Base Breakdown Voltage I

C 

= 1 mA, I

E 

= 0

1200

1350

V

 BV

CEO

Collector-Emitter Breakdown 
Voltage

I

C 

= 5 mA, I

B 

= 0

600

750

V

 BV

EBO

Emitter-Base Breakdown Voltage

I

E 

= 500 

μA, I

C 

= 0

12.0

13.7

V

I

CES

Collector Cut-off Current

V

CES 

= 1200 V, V

BE 

= 0

T

C 

= 25

°C

100

μA

T

C 

= 125

°C

500

I

CEO

Collector Cut-off Current

V

CE 

= 600 V, I

B 

= 0

T

C 

= 25

°C

100

μA

T

C 

= 125

°C

500

I

EBO

Emitter Cut-off Current

V

EB 

= 12 V, I

C 

= 0

T

C 

= 25

°C

10

μA

h

FE

DC Current Gain

V

CE 

= 1 V, I

C 

= 0.2 A

T

C 

= 25

°C

15

28

40

T

C 

= 125

°C

8

18

V

CE 

= 1 V, I

C 

= 1 A

T

C 

= 25

°C

4.0

6.4

T

C 

= 125

°C

3.0

4.7

V

CE 

= 2.5 V, 

I

C 

= 0.5 A

T

C 

= 25

°C

12

20

30

T

C 

= 125

°C

6

12

V

CE

(sat)

Collector-Emitter Saturation 
Voltage

I

C 

= 0.2 A, I

B 

= 0.02 A

T

C 

= 25

°C

0.31

0.80

V

T

C 

= 125

°C

0.54

1.10

I

C 

= 0.4 A, I

B 

= 0.08 A

T

C 

= 25

°C

0.15

0.60

T

C 

= 125

°C

0.23

1.00

I

C 

= 1 A, I

B 

= 0.2 A

T

C 

= 25

°C

0.40

1.50

T

C 

= 125

°C

1.30

3.00

V

BE

(sat)

Base-Emitter Saturation Voltage

I

C 

= 0.4 A, I

B 

= 0.08 A

T

C 

= 25

°C

0.77

1.00

V

T

C 

= 125

°C

0.60

0.90

I

C 

= 1 A, I

B 

= 0.2 A

T

C 

= 25

°C

0.83

1.20

T

C 

= 125

°C

0.70

1.00

C

ib

Input Capacitance

V

EB 

= 8 V, I

C 

= 0, f = 1 MHz

385

500

pF

C

ob

Output Capacitance

V

CB 

= 10 V, I

E 

= 0, f = 1 MHz

60

100

pF

f

T

Current Gain Bandwidth Product

I

C 

= 0.5 A,V

CE 

= 10 V

11

MHz

V

F

Diode Forward Voltage

I

F 

= 0.2 A

T

C 

= 25

°C

0.75

1.20

V

T

C 

= 125

°C

0.59

I

F 

= 0.4 A

T

C 

= 25

°C

0.80

1.30

T

C 

= 125

°C

0.64

I

F 

= 1 A

T

C 

= 25

°C

0.90

1.50