Korea Electronics N/A Emitter reverse voltag BC847C Ficha De Dados
Códigos do produto
BC847C
2008. 8. 13
1/3
SEMICONDUCTOR
TECHNICAL DATA
BC846/7/8
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
High Voltage : BC846 V
CEO
=65V.
For Complementary With PNP Type BC856/857/858.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
TYPE
BC846A
BC846B
BC847A
BC847B
BC847C
BC848A
BC848B
BC848C
MARK
1A
1B
1E
1F
1G
1J
1K
1L
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
BC846
V
CBO
80
V
BC847
50
BC848
30
Collector-Emitter
Voltage
BC846
V
CEO
65
V
BC847
45
BC848
30
Emitter-Base Voltage
BC846
V
EBO
6
V
BC847
6
BC848
5
Collector Current
I
C
100
mA
Emitter Current
I
E
-100
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
MARK SPEC
Type Name
Marking
Lot No.
P
C
* : Package Mounted On 99.5% Alumina 10
8
0.6mm.