Korea Electronics N/A Emitter reverse voltag BC857C Ficha De Dados

Códigos do produto
BC857C
Página de 3
1999. 3. 9
1/3
SEMICONDUCTOR
TECHNICAL DATA
BC856/7/8
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
For Complementary With NPN Type BC846/847/848.
MAXIMUM RATING  (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93   0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+_
CHARACTERISTIC
SYMBOL
RATING 
UNIT
Collector-Base Voltage
BC856
V
CBO
-80
V
BC857
-50
BC858
-30
Collector-Emitter 
Voltage
BC856
V
CEO
-65
V
BC857
-45
BC858
-30
Emitter-Base Voltage
BC856
V
EBO
-5
V
BC857
-5
BC858
-5
Collector Current 
I
C
-100 
mA
Emitter Current 
I
E
100
mA
Collector Power Dissipation
P
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
MARK SPEC
Type Name
Marking
Lot No.
P
C
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
TYPE
BC856A
BC856B
BC857A
BC857B
BC857C
BC858A
BC858B
BC858C
MARK
3A
3B
3E
3F
3G
3J
3K
3L