Nxp Semiconductors BU2520DW BU Transistor NPN SOT 429 (TO 247) 10A 800V BU2520DW Ficha De Dados
Códigos do produto
BU2520DW
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520DW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
10
A
I
CM
Collector current peak value
-
25
A
P
tot
Total power dissipation
T
mb
≤
25 ˚C
-
125
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 6.0 A; I
B
= 1.2 A
-
5.0
V
I
Csat
Collector saturation current
6
-
A
V
F
Diode forward voltage
I
F
= 6.0 A
-
2.2
V
t
f
Fall time
I
Csat
= 6.0 A; I
B(end)
= 1.0 A
0.35
0.5
µ
s
PINNING - SOT429
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
10
A
I
CM
Collector current peak value
-
25
A
I
B
Base current (DC)
-
6
A
I
BM
Base current peak value
-
9
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
150
mA
-I
BM
Reverse base current peak value
1
-
6
A
P
tot
Total power dissipation
T
mb
≤
25 ˚C
-
125
W
T
stg
Storage temperature
-65
150
˚C
T
j
Junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Junction to mounting base
-
-
1.0
K/W
R
th j-a
Junction to ambient
in free air
45
-
K/W
2
3
1
b
c
e
Rbe
1 Turn-off current.
September 1997
1
Rev 1.100