Nxp Semiconductors BU2708DF BU Transistor NPN SOT 199 8A 825V BU2708DF Ficha De Dados
Códigos do produto
BU2708DF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DF
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 ˚C
BV
EBO
Emitter-base breakdown voltage
I
B
= 600 mA
7.5
13.5
-
V
R
BE
Base-emitter resistance
V
EB
= 7.5 V
45
Ω
V
CEsat
Collector-emitter saturation voltage
I
C
= 4 A; I
B
= 1.33 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 4 A; I
B
= 1.33 A
0.83
0.91
1.00
V
V
F
Diode forward voltage
I
F
= 4 A
1.6
V
h
FE
DC current gain
I
C
= 1 A; V
CE
= 5 V
-
15
-
h
FE
I
C
= 4 A; V
CE
= 1 V
3
6
7.3
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (line deflection
I
Csat
= 4 A; L
C
= 1 mH; C
FB
= 12.2 nF;
circuit 16 kHz)
V
CC
= 120 V; I
B(end)
= 0.8 A; L
B
= 6
µ
H;
-V
BB
= 4 V; -I
BM
= I
CM
/2
t
s
Turn-off storage time
4.8
5.5
µ
s
t
f
Turn-off fall time
0.4
0.52
µ
s
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.400