Nxp Semiconductors BU2522AW BU Transistor NPN SOT 429 (TO 247) 10A 800V BU2522AW Ficha De Dados
Códigos do produto
BU2522AW
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522AW
Fig.3. Switching times waveforms (64 kHz).
Fig.4. Switching times definitions.
Fig.5. Switching times test circuit.
Fig.6. Test Circuit RBSOA. V
CC
= 140 V; -V
BB
= 4 V;
L
C
= 100 - 400
µ
H; V
CL
≤
1500 V; L
B
= 3
µ
H;
C
FB
= 1 - 2.2 nF; I
B
(end) = 1.6 - 2 A
Fig.7. Typical DC current gain. h
FE
= f (I
C
)
V
CE
= 5 V
Fig.8. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
V
ICsat
I end
16 us
6.5 us
5 us
t
t
t
TRANSISTOR
DIODE
B
I C
I B
CE
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
0.01
0.1
1
10
100
IC / A
BU2522A
100
10
1
h
FE
Tj = 25 C
Tj = -40 C
Tj = 85 C
+ 150 v nominal
adjust for ICsat
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
0.1
1
10
IC / A
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
VBESAT / V
BU2522A
Tj = 25 C
Tj = 85 C
IC/IB =
3
5
5
September 1997
3
Rev 1.100