Fairchild Semiconductor N/A PZTA64 Ficha De Dados
Códigos do produto
PZTA64
M
P
SA64 / MM
BT
A64 / PZT
A64 / PZT
A
64
— PNP Darlington T
— PNP Darlington T
ransistor
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MPSA64 / MMBTA64 / PZTA64 Rev. B0
2
Electrical Characteristics
T
a
= 25°C unless otherwise noted
* Pulse Test: Pulse Width
≤ 300μs, Duty Cycle ≤ 2.0%
Typical Performance Characteristics
Symbol
Parameter
Test Condition
Min.
Max.
Units
OFF CHARACTERISTICS
V
(BR)CES
Collector-Emitter Breakdown Voltage
I
C
= -100
μA, I
B
= 0
-30
V
I
CBO
Collector-Cutoff Current
V
CB
= -30V, I
E
= 0
-100
nA
I
EBO
Emitter-Cutoff Current
V
EB
= -10V, I
C
= 0
-100
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= -10mA, V
CE
= -5.0V
I
C
= -100mA, V
CE
= -5.0V
10,000
20,000
20,000
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= -100mA, I
B
= -0.1mA
-1.5
V
V
BE(on)
Base-Emitter On Voltage
I
C
= -100mA, V
CE
= -5.0V
-2.0
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= -10mA, V
CE
= -5.0V,
f = 100MHz
125
MHz
Typical Pulsed Current Gain
vs Collect or Current
0.01
0.1
1
0
10
20
30
40
50
I - COLLECTOR CURRENT (A)
h
-
T
YPI
C
A
L
PU
L
S
ED
C
U
R
R
EN
T
G
A
IN
(
K
)
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
0.001
0.01
0.1
1
0
0.4
0.8
1.2
1.6
I - COLLECTOR CURRENT (A)
V
-
C
O
L
L
E
C
T
O
R
E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
C
CE
S
A
T
β
= 1000
25 °C
- 40 °C
125 °C