Fairchild Semiconductor N/A KSC2073H2TU Ficha De Dados
Códigos do produto
KSC2073H2TU
KSC2073 — NPN Ep
it
axial Silico
n T
rans
istor
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
KSC2073 Rev. A1
2
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter On Voltage
Figure 5. Safe Operating Area
Figure 6. Power Derating
0
5
10
15
20
25
30
35
40
45
50
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
B
=1mA
I
B
=2mA
I
B
=3mA
I
B
=4mA
I
B
=5mA
I
B
=6mA
I
B
=7mA
I
B
=8mA
I
C
[A], COL
L
ECT
O
R
C
URR
ENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.01
0.1
1
10
10
100
1000
V
CE
=10V
h
FE
, DC
CUR
REN
T
GA
IN
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.01
0.1
1
10
V
CE
(sat)
V
BE
(sat)
I
C
=10I
B
V
BE
(s
a
t)
,V
CE
(s
at)[V
], SAT
URAT
ION
VOL
T
AG
E
I
C
[A], COLLECTOR CURRENT
1
10
100
10
100
1000
f=1MHz
I
E
=0
C
ob
[pF
], CA
PACIT
A
NC
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
10
100
0.1
1
10
S/B limitation
S/B limitation
Thermal limitation
DC
*1mS
1.T
C
=25
o
C
2.*Single pulse
I
C
[A
],
C
O
L
L
E
CT
O
R
CU
RRE
NT
V
CE
[V], COLLECTOR EMITTER VOLTAGE
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
P
C
[W
], P
O
W
E
R
D
IS
S
IP
A
T
IO
N
T
C
[
o
C], CASE TEMPERATURE