Fairchild Semiconductor N/A MMBTA42 Ficha De Dados
Códigos do produto
MMBTA42
MPSA42
/ MMBT
A
42 /
PZT
A42 —
NPN
High V
o
lt
age
Amplifier
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MPSA42 / MMBTA42 / PZTA42 Rev. B2
2
Electrical Characteristics
T
A
=25
°C unless otherwise noted
* Pulse Test: Pulse Width
≤300μs, Duty Cycle≤2%
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
B
= 0
300
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
μA, I
E
= 0
300
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100
μA, I
C
= 0
6
V
I
CBO
Collector-Cutoff Current
V
CB
= 200 V, I
E
= 0
0.1
μA
I
EBO
Emitter-Cutoff Current
V
EB
= 6 V, I
C
= 0
0.1
μA
On Characteristics*
h
FE
DC Current Gain
V
CE
= 10 V, I
C
= 1.0 mA
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 30 mA
25
40
40
40
40
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 20 mA, I
B
= 2.0 mA
0.5
V
V
BE(sat)
Base-Emitter On Voltage
I
C
= 20 mA, I
B
= 2.0 mA
0.9
V
Small Signal Characteristics
f
T
Current Gain Bandwidth Product
I
C
= 10mA, V
CE
= 20V, f = 100MHz
50
MHz
Ccb
Collector-Base Capacitance
V
CB
= 20 V, I
E
= 0, f = 1.0 MHz
3.0
pF