Fairchild Semiconductor N/A MMPQ3906 Ficha De Dados
Códigos do produto
MMPQ3906
F
F
B3906
/ FMB39
0
6 / MMPQ3
906 — PNP Mu
lt
i-Chip General-
Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFB3906 / FMB3906 / MMPQ3906 Rev. 1.1.0
3
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
3. Pulse test: pulse width ≤ 300
3. Pulse test: pulse width ≤ 300
μs, duty cycle ≤ 2.0%.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage
(3)
I
C
= -1.0 mA, I
B
= 0
-40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= -10
μA, I
E
= 0
-40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= -10
μA, I
C
= 0
-5.0
V
I
BL
Base Cut-Off Current
V
CE
= -30 V, V
BE
= 3.0 V
-50
nA
I
CEX
Collector Cut-Off Current
V
CE
= -30 V, V
BE
= 3.0 V
-50
nA
On Characteristics
h
FE
DC Current Gain
(3)
FFB3906, FMB3906
I
C
= -0.1 mA, V
CE
= -1.0 V
60
MMPQ3906
40
FFB3906, FMB3906
I
C
= -1.0 mA, V
CE
= -1.0 V
80
MMPQ3906
60
FFB3906, FMB3906
I
C
= 10 mA, V
CE
= -1.0 V
100
300
MMPQ3906
75
All Devices
I
C
= -50 mA, V
CE
= -1.0 V
60
All Devices
I
C
= -100 mA, V
CE
= -1.0 V
30
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= -10 mA, I
B
= -1.0 mA
-0.25
V
I
C
= -50 mA, I
B
= -5.0 mA
-0.40
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= -10 mA, I
B
= -1.0 mA
-0.65
-0.85
V
I
C
= -50 mA, I
B
= -5.0 mA
-0.95
Small-Signal Characteristics (MMPQ3906 Only)
f
T
Current Gain-Bandwidth Product
I
C
= -10 mA, V
CE
= -20 V,
f = 100 MHz
200
MHz
C
ob
Output Capacitance
V
CB
= -5.0 V, I
E
= 0,
f = 140 kHz
4.5
pF
C
ib
Input Capacitance
V
EB
= -0.5 V, I
C
= 0,
f = 140 kHz
10
pF