On Semiconductor N/A MJ 802 NPN Case type TO 3 I(C) 30 A MJ802 Ficha De Dados
Códigos do produto
MJ802
MJ802
http://onsemi.com
3
h FE
, NORMALIZED CURRENT
GAIN
I
C
, COLLECTOR CURRENT (AMP)
T
J
= 175° C
3.0
I
C
, COLLECTOR CURRENT (AMP)
1.0
2.0
0.7
1.0
0.5
0.1
Figure 2. DC Current Gain
Figure 3. ‘‘On” Voltages
V
BE(sat)
@ I
C
/I
B
= 10
V
CE
= 2.0 V
25°C
− 55°C
T
J
= 25°C
0.03
0.1
0.2 0.3 0.5
10
20 30
ON" VOL
TAGE (VOL
TS)
0.3
0.2
0.05
2.0 3.0 5.0
DATA SHOWN IS OBTAINED FROM PULSE TESTS
AND ADJUSTED TO NULLIFY EFFECT OF I
AND ADJUSTED TO NULLIFY EFFECT OF I
CBO
.
2.0
1.8
1.4
1.6
1.2
0
1.0
0.8
0.6
0.4
0.2
1.0
0.03
0.1
0.2 0.3 0.5
10
20 30
0.05
2.0 3.0 5.0
V
BE
@ V
CE
= 2.0 V
V
CE(sat)
@ I
C
/I
B
= 10
I C
, COLLECT
OR CURRENT
(AMP)
50
1.0
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
5.0
20
10
1.0
0.2
10
Figure 4. Active Region Safe Operating Area
100
5.0
2.0
0.5
0.1
20
2.0 3.0
100
50
30
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATIONS T
BONDING WIRE LIMITED
THERMAL LIMITATIONS T
C
= 25°C
PULSE DUTY CYCLE ≤ 10%
T
J
= 200° C
100 ms
1.0 ms
5.0ms
dc
The Safe Operating Area Curves indicate I
C
− V
CE
limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum T
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum T
J
, power
temperature derating must be observed for both steady state
and pulse power conditions.
and pulse power conditions.