Fairchild Semiconductor N/A KSA473YTU Ficha De Dados
Códigos do produto
KSA473YTU
KSA473 — PNP Epit
axial Silicon
T
ransistor
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
KSA473 Rev. A2
2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= - 500
μA, I
E
= 0
- 30
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= - 10mA, I
B
= 0
- 30
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= - 1mA, I
C
= 0
- 5
V
I
CBO
Collector Cut-off Current
V
CB
= - 20V, I
E
= 0
- 1.0
μA
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 1.0
μA
h
FE1
h
FE2
DC Current Gain
V
CE
= - 2V, I
C
= - 0.5A
V
CE
= - 2V, I
C
= - 2.5A
70
25
25
240
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= - 2A, I
B
= - 0.2A
- 0.3
- 0.8
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
= - 2V, I
C
= - 0.5A
- 0.75
- 1.0
V
f
T
Current Gain Bandwidth Product
V
CE
= - 2V, I
C
= - 0.5A
100
MHz
C
ob
Output Capacitance
V
CB
= - 10V, I
E
= 0,
f = 1MHz
40
pF
Classification
O
Y
h
FE1
70 ~ 140
120 ~ 240