Fairchild Semiconductor N/A FFB2227A Ficha De Dados
Códigos do produto
FFB2227A
F
F
B2227
A / FMB2227A — NPN & PN
P General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFB2227A / FMB2227A Rev. 1.1.0
3
Electrical Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Notes:
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
4. Pulse test: pulse width ≤ 300
4. Pulse test: pulse width ≤ 300
μs, duty cycle ≤ 2.0%.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown
Voltage
(4)
I
C
= 10 mA, I
B
= 0
30
V
V
(BR)CBO
Collector-Base Breakdown
Voltage
Voltage
I
C
= 10
μA, I
E
= 0
60
V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10
μA, I
C
= 0
5
V
I
CBO
Collector Cut-Off Current
V
CB
= 50 V, I
E
= 0
30
nA
I
EBO
Emitter Cut-Off Current
V
EB
= 3.0 V, I
C
= 0
30
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 1.0 mA, V
CE
= 10 V
50
I
C
= 10 mA, V
CE
= 10 V
75
I
C
= 150 mA, V
CE
= 10 V
(4)
100
I
C
= 300 mA, V
CE
= 10 V
(4)
30
V
CE
(sat)
Collector-Emitter Saturation
Voltage
Voltage
(4)
I
C
= 150 mA, I
B
= 15 mA
0.4
V
I
C
= 300 mA, I
B
= 30 mA
1.4
V
V
BE
(sat)
Base-Emitter Saturation
Voltage
Voltage
(4)
I
C
= 150 mA, I
B
= 15 mA
1.3
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 50 mA, V
CE
= 20 V,
f = 100 MHz
250
MHz
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 100 kHz
4.0
pF
C
ibo
Input Capacitance
V
EB
= 2.0 V, I
C
= 0, f = 100 kHz
12
pF
NF
Noise Figure
I
C
= 100
μA, V
CE
= 10 V,
R
S
= 1.0 k
Ω, f = 1.0 kHz
2.0
dB
SWITCHING CHARACTERISTICS
t
on
Turn-on Time
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= 15 mA
30
ns
t
d
Delay Time
8.0
ns
t
r
Rise Time
20
ns
t
off
Turn-off Time
V
CC
= 6.0 V, I
C
= 150 mA,
I
B1
= I
B2
= 15 mA
80
ns
t
s
Storage Time
60
ns
t
f
Fall Time
20
ns