Fairchild Semiconductor N/A FMMT449 Ficha De Dados

Fairchild Semiconductor

Códigos do produto

FMMT449

MHz

150

I

C

= 50mA,V

CE

= 10 V, f=100MHz

Transition Frequency

f

T

pF

15

V

CB

= 10 V, I

E

= 0, f = 1MHz

Output Capacitance

C

obo

SMALL SIGNAL CHARACTERISTICS

V

1

I

C

= 1 A, V

CE

= 2 V

Base-Emitter On Voltage

V

BE(on)

V

1.25

I

C

= 1 A, I

B

= 100 mA

Base-Emitter Saturation Voltage

V

BE(sat)

mV

V

500

1.0

I

C

= 1 A, I

B

= 100 mA

I

C

= 2 A, I

B

= 200 mA

Collector-Emitter Saturation Voltage

V

CE(sat)

-

300

70

100

80

40

I

C

= 50 mA, V

CE

= 2V

I

C

= 500 mA, V

CE

= 2V

I

C

= 1A, V

CE

= 2V

I

C

= 2A, V

CE

= 2V

DC Current Gain

h

FE

ON CHARACTERISTICS*

nA

100

V

EB

= 4V

Emitter Cutoff Current

I

EBO

nA
uA

100

10

V

CB

= 40 V

V

CB

= 40 V, Ta=100°C

Collector Cutoff Current

I

CBO

V

5

I

E

= 100

µ

A

Emitter-Base Breakdown Voltage

BV

EBO

V

50

I

C

= 1mA

Collector-Base Breakdown Voltage

BV

CBO

V

30

I

C

= 10 mA

Collector-Emitter Breakdown Voltage

BV

CEO

OFF CHARACTERISTICS

Units

Max

Min

Test Conditions

Parameter

Symbol

NPN Low Saturation Transistor

(continued)

Electrical Characteristics

T

A = 25°C unless otherwise noted

*Pulse Test: Pulse Width

≤

300

µ

s, Duty Cycle

≤

2.0%

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

1998Fairchild Semiconducto Corporation

fmmt449.lwpPrNB revA

FMMT449