Manuais de utilizador para Samsung M378T5663EH3-CE6

índice analítico

• 1.0 DDR2 Unbuffered DIMM Ordering Information

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• 2.0 Features

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• 3.0 Address Configuration

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• 4.0 x64 DIMM Pin Configurations (Front side/Back side)

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• 5.0 x72 DIMM Pin Configurations (Front side/Back side)

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• 6.0 Pin Description

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• 7.0 Input/Output Function Description

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• 8.0 Functional Block Diagram :

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  • 8.1 1GB, 128Mx64 Module - M378T2863EHS

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  • 8.2 1GB, 128Mx72 ECC Module - M391T2863EH3

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  • 8.3 2GB, 256Mx64 Module - M378T5663EH3

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  • 8.4 2GB, 256Mx72 ECC Module - M391T5663EH3

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  • 8.5 512MB, 64Mx64 Module - M378T6464EHS

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• 9.0 Absolute Maximum DC Ratings

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• 10.0 AC & DC Operating Conditions

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  • 10.1 Recommended DC Operating Conditions (SSTL - 1.8)

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  • 10.2 Operating Temperature Condition

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  • 10.3 Input DC Logic Level

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  • 10.4 Input AC Logic Level

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  • 10.5 AC Input Test Conditions

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• 11.0 IDD Specification Parameters Definition

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• 12.0 Operating Current Table :

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  • 12.1 M378T2863EHS : 1GB(128Mx8 *8) Module

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  • 12.2 M378T5663EH3 : 2GB(128Mx8 *16) Module

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  • 12.3 M391T2863EH3 : 1GB(128Mx8 *9) ECC Module

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  • 12.4 M391T5663EH3 : 2GB(128Mx8 *18) ECC Module

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  • 12.5 M378T6464EHS : 512MB(64Mx16 *4) Module

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• 13.0 Input/Output Capacitance

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• 14.0 Electrical Characteristics & AC Timing for DDR2-800/667

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  • 14.1 Refresh Parameters by Device Density

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  • 14.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin

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  • 14.3 Timing Parameters by Speed Grade

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• 15.0 Physical Dimensions :

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  • 15.1 128Mbx8 based 128Mx64 Module(1 Rank)

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  • 15.2 128Mbx8 based 128Mx72 Module(1 Rank)

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  • 15.3 128Mbx8 based 256Mx64/x72 Module(2 Ranks)

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  • 15.4 64Mbx16 based 64Mx64 Module (1 Rank)

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