Справочник Пользователя для National Instruments DP8400
TL/F/5012
The
DP8400
Family
of
Memory
Memory
Interface
Circuits
AN-302
National Semiconductor
Application Note 302
Charles Carinalli
Mike Evans
February 1986
Application Note 302
Charles Carinalli
Mike Evans
February 1986
The DP8400 Family of
Memory Interface Circuits
Memory Interface Circuits
INTRODUCTION
The rapid development in dynamic random access memory
(DRAM) chip storage capability, coupled with significant
component cost reductions, has allowed designers to build
large memory arrays with high performance specifications.
However, the development of memory arrays continues to
have a common set of problems generated by the complex
timing and refresh requirements of DRAMs. These include:
how to quickly drive the memories to take advantage of their
speed, minimization of board space required by the support
circuitry and the need for error detection and correction.
Unfortunately, these problems must be addressed with each
new system design. Full system solutions will vary greatly,
depending on the DRAM array size, memory speed, and the
processor.
(DRAM) chip storage capability, coupled with significant
component cost reductions, has allowed designers to build
large memory arrays with high performance specifications.
However, the development of memory arrays continues to
have a common set of problems generated by the complex
timing and refresh requirements of DRAMs. These include:
how to quickly drive the memories to take advantage of their
speed, minimization of board space required by the support
circuitry and the need for error detection and correction.
Unfortunately, these problems must be addressed with each
new system design. Full system solutions will vary greatly,
depending on the DRAM array size, memory speed, and the
processor.
This application note introduces a complete family of DRAM
support circuits that provides a straightforward solution to
the above problems while allowing a high degree of flexibili-
ty in application with little or no performance penalty. The
DP8400 family (Table I) includes DRAM controllers, error
detection/correction circuits, octal address buffers and sys-
tem control circuits. The LSI blocks are designed with flex-
ible interfaces, making application possible with all existing
DRAMs including the recently announced 1 Mbit devices.
Additionally, interface is easy to all popular microprocessors
with memory word widths possible from 8 to 80 bits.
support circuits that provides a straightforward solution to
the above problems while allowing a high degree of flexibili-
ty in application with little or no performance penalty. The
DP8400 family (Table I) includes DRAM controllers, error
detection/correction circuits, octal address buffers and sys-
tem control circuits. The LSI blocks are designed with flex-
ible interfaces, making application possible with all existing
DRAMs including the recently announced 1 Mbit devices.
Additionally, interface is easy to all popular microprocessors
with memory word widths possible from 8 to 80 bits.
TABLE I. DP8400 Family Members
DP8400-2,
16 and 32 Bit Error
DP8402A
Checker/Correctors
DP8408A, DP8409A,
DRAM Controller/Drivers
DP8417, DP8418,
DP8419, DP8428, DP8429
DP8419, DP8428, DP8429
DP8420, DP84244
DRAM Buffer Drivers
DP84XX2
Microprocessor
Interface Circuits
Interface Circuits
FULL FUNCTION DRAM CONTROLLER
The heart of any DRAM array design is the controller func-
tion. Previous LSI controllers supplied a minimum function
of address multiplexing with an on-board refresh counter.
This required external delay line timing and logic to control
memory access, additional logic to perform memory refresh,
and external drivers to drive the capacitive memory array.
The complete solution results in significant access delay in
relation to DRAM speeds and skews in output sequencing,
as well as a large component count.
tion. Previous LSI controllers supplied a minimum function
of address multiplexing with an on-board refresh counter.
This required external delay line timing and logic to control
memory access, additional logic to perform memory refresh,
and external drivers to drive the capacitive memory array.
The complete solution results in significant access delay in
relation to DRAM speeds and skews in output sequencing,
as well as a large component count.
A previous LSI solution brought much of this logic on-chip.
However, it is limited in application to certain microproces-
sors and has the disadvantage of all access timing originat-
ing from an external clock, whose phase uncertainty gener-
ates a delay in actually knowing when an access has start-
ed.
However, it is limited in application to certain microproces-
sors and has the disadvantage of all access timing originat-
ing from an external clock, whose phase uncertainty gener-
ates a delay in actually knowing when an access has start-
ed.
The DP8409A multi-mode dynamic RAM controller/driver
was the first controller to resolve all of these problems. This
Schottky bipolar device provides the flexibility of external
access control, along with automatic access timing genera-
tion, without the need for an external timing generator clock.
In addition, on-board capacitive drivers allow direct drive for
over 88 DRAMs. With the simple addition of refresh clocks,
the circuit can perform hidden refresh automatically. It is the
DP8409A design that has been used as the spring board for
a whole family of controllers with faster speed performance
while maintaining maximum pin upgrade compatibility.
was the first controller to resolve all of these problems. This
Schottky bipolar device provides the flexibility of external
access control, along with automatic access timing genera-
tion, without the need for an external timing generator clock.
In addition, on-board capacitive drivers allow direct drive for
over 88 DRAMs. With the simple addition of refresh clocks,
the circuit can perform hidden refresh automatically. It is the
DP8409A design that has been used as the spring board for
a whole family of controllers with faster speed performance
while maintaining maximum pin upgrade compatibility.
All Control On-Chip
Figure 1 is a block diagram of the DP8409A. the ADS input
strobes the parallel memory address into the row latches
R0 – 8, the column latches C0 – 8, and bank select B0 and
B1. The nine output drivers may be multiplexed between the
row or column input latches, or the 9-bit on-chip refresh
counter. One of four RAS outputs is selected during an ac-
cess cycle by setting the bank select inputs B0 or B1. All
four RAS outputs are active during refresh. Either external
or automatic control is available on-chip for the CAS output,
while an on-chip buffer is provided to minimize skew associ-
ated with WE output generation.
R0 – 8, the column latches C0 – 8, and bank select B0 and
B1. The nine output drivers may be multiplexed between the
row or column input latches, or the 9-bit on-chip refresh
counter. One of four RAS outputs is selected during an ac-
cess cycle by setting the bank select inputs B0 or B1. All
four RAS outputs are active during refresh. Either external
or automatic control is available on-chip for the CAS output,
while an on-chip buffer is provided to minimize skew associ-
ated with WE output generation.
All DRAM address and control outputs on the DP8409A can
directly drive in excess of 500 pF, or the equivalent of 88
DRAMs (4 banks of 22 DRAMs). All output drivers are
closely matched, significantly reducing output skew. Each
output stage has symmetrical high and low logic level drive
capability, insuring matched rise and fall time characteris-
tics.
directly drive in excess of 500 pF, or the equivalent of 88
DRAMs (4 banks of 22 DRAMs). All output drivers are
closely matched, significantly reducing output skew. Each
output stage has symmetrical high and low logic level drive
capability, insuring matched rise and fall time characteris-
tics.
Flexibility and Upgradability to 256k or 1 Mbit DRAMs
The 9 multiplexed address outputs and 9-bit internal refresh
counter of the DP8409A direct addressing capability for
256k DRAMs. Careful design of memory boards, using 64k
DRAMs with the DP8409A, insures direct upgradability to
256k DRAMs. This can be done by simply allowing for board
address extension by two bits and designing the ninth ad-
dress trace (Q8) of the DP8409A to connect to pin 1 of the
DRAMs (A8). This is, in general, a non-connected pin in
64ks and the ninth address in 256ks. All that need be done
is to remove the 64ks and replace them with 256ks, thereby
increasing the memory on the same board by a 4 to 1 ratio.
The resulting development cost saving can be significant.
counter of the DP8409A direct addressing capability for
256k DRAMs. Careful design of memory boards, using 64k
DRAMs with the DP8409A, insures direct upgradability to
256k DRAMs. This can be done by simply allowing for board
address extension by two bits and designing the ninth ad-
dress trace (Q8) of the DP8409A to connect to pin 1 of the
DRAMs (A8). This is, in general, a non-connected pin in
64ks and the ninth address in 256ks. All that need be done
is to remove the 64ks and replace them with 256ks, thereby
increasing the memory on the same board by a 4 to 1 ratio.
The resulting development cost saving can be significant.
Although the new 1 Mbit DRAMs require the larger 18 pin
package, which will require a memory board redesign, up-
grading the controller portion of the board may need no
redesign when converting from the DP8409A or DP8419 to
the new DP8429 1 Mbit DRAM controller driver.
package, which will require a memory board redesign, up-
grading the controller portion of the board may need no
redesign when converting from the DP8409A or DP8419 to
the new DP8429 1 Mbit DRAM controller driver.
Three mode pins (M0, M1 and M2) offer externally select-
able modes of operation, a key reason for the DP8409A’s
application flexibility (Table II). The operational modes are
divided between external and automatic memory control.
able modes of operation, a key reason for the DP8409A’s
application flexibility (Table II). The operational modes are
divided between external and automatic memory control.
C1995 National Semiconductor Corporation
RRD-B30M115/Printed in U. S. A.