Справочник Пользователя для Intel E5540 AT80602000789AA
Модели
AT80602000789AA
Intel
®
Xeon
®
Processor 5500 Series Datasheet, Volume 1
149
Boxed Processor Specifications
8.2.2
Boxed Processor Retention Mechanism and Heat Sink
Support (URS)
Baseboards designed for use by a system integrator should include holes that are in
proper alignment with each other to support the boxed processor. Refer to
proper alignment with each other to support the boxed processor. Refer to
for mounting hole dimensions.
Assembly. The URS is designed to extend air-cooling capability through the use of
larger heat sinks with minimal airflow blockage and bypass. URS retention transfers
load to the baseboard via the Unified Backplate Assembly. The URS spring, captive in
the heatsink, provides the necessary compressive load for the thermal interface
material. For specific design details on the URS and the Unified Backplate please refer
to the Intel® Xeon® Processor 5500 Series Thermal / Mechanical Design Guide.
larger heat sinks with minimal airflow blockage and bypass. URS retention transfers
load to the baseboard via the Unified Backplate Assembly. The URS spring, captive in
the heatsink, provides the necessary compressive load for the thermal interface
material. For specific design details on the URS and the Unified Backplate please refer
to the Intel® Xeon® Processor 5500 Series Thermal / Mechanical Design Guide.
All components of the URS heat sink solution will be captive to the heat sink and will
only require a Phillips screwdriver to attach to the Unified Backplate Assembly. When
installing the URS the screws should be tightened until they will no longer turn easily.
This should represent approximately 8 inch-pounds of torque. More than that may
damage the retention mechanism components.
only require a Phillips screwdriver to attach to the Unified Backplate Assembly. When
installing the URS the screws should be tightened until they will no longer turn easily.
This should represent approximately 8 inch-pounds of torque. More than that may
damage the retention mechanism components.