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Philips Semiconductors
Product specification
 TOPFET high side switch
BUK215-50Y 
 SMD version of BUK210-50Y
 
STATIC CHARACTERISTICS
Limits are at -40˚C 
 T
mb
 
 150˚C and typicals at T
mb
 = 25 ˚C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Clamping voltages
V
BG
Battery to ground
I
G
 = 1 mA
50
55
65
V
V
BL
Battery to load
I
L
 = I
G
 = 1 mA
50
55
65
V
-V
LG
Negative load to ground
I
L
 = 10 mA
18
23
28
V
-V
LG
Negative load voltage
1
I
L
 = 10 A; t
p
 = 300 
µ
s
20
25
30
V
Supply voltage
battery to ground
V
BG
Operating range
2
5.5
-
35
V
Currents
9 V 
 V
BG
 
 16 V
I
B
Quiescent current
3
V
LG
 = 0 V
-
-
20
µ
A
T
mb
 = 25˚C
-
0.1
2
µ
A
I
L
Off-state load current
4
V
BL
 = V
BG
-
-
20
µ
A
T
mb
 = 25˚C
-
0.1
1
µ
A
I
G
Operating current
5
I
L
 = 0 A
-
2
4
mA
I
L
Nominal load current
6
V
BL
 = 0.5 V
T
mb
 = 85˚C
9
-
-
A
Resistances
V
BG
I
L
t
p
7
T
mb
R
ON
On-state resistance
9 to 35 V
10 A
300 
µ
s
25˚C
-
28
38
m
Ω
150˚C
-
-
70
m
Ω
R
ON
On-state resistance
6 V
10 A
300 
µ
s
25˚C
-
36
48
m
Ω
150˚C
-
-
88
m
Ω
R
G
Internal ground resistance
I
G
 = 10 mA
95
150
190
Ω
For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
On-state resistance is increased if the supply voltage is less than 9 V.
This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
The measured current is in the load pin only.
This is the continuous current drawn from the supply with no load connected, but with the input high.
Defined as in ISO 10483-1.  For comparison purposes only.  This parameter will not be characterised for automotive PPAP.
The supply and input voltage for the R
ON
 tests are continuous.  The specified pulse duration t
p
 refers only to the applied load current.
May 2001
3
Rev 1.010