Справочник Пользователя для Transcend 256MB SDRAM 144Pin SO-DIMM PC133 Unbuffer Non-ECC Memory TS32MSS64V6G

 

 

 

Transcend information Inc

 

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The TS32MSS64V6G is a 32Mx64 Synchronous 

Dynamic RAM high-density memory module. The 
TS32MSS64V6G consists of 8 pieces of CMOS 
16Mx16bits Synchronous DRAMs in TSOP-II 400mil 
packages and a 2048 bits serial EEPROM on a 144-pin 
printed circuit board. The TS32MSS64V6G is a Dual 
In-Line Memory Module and is intended for mounting into 
144-pin edge connector sockets. 

Synchronous design allows precise cycle control with the 

use of system clock. I/O transactions are possible on every 
clock cycle. Range of operation frequencies, 
programmable latencies allow the same device to be useful 
for a variety of high bandwidth, high performance memory 
system applications. 

 

•  Burst Mode Operation. 
•  Auto and Self Refresh. 
•  Serial Presence Detect (SPD) with serial EEPROM 
•  LVTTL compatible inputs and outputs. 
•  Single 3.3V ± 0.3V power supply. 
•  MRS cycle with address key programs. 

Latency (Access from column address) 
Burst Length (1,2,4,8 & Full Page) 
Data Sequence (Sequential & Interleave) 

•  All inputs are sampled at the positive going edge   

of the system clock. 

•  DRAM Brand: Promos. 

•   Operating Temperature T

A

: 0~70 

°C 

A0~A12 Address 

inputs 

BA0,BA1 Select 

Bank 

DQ0~DQ63 Data 

inputs/outputs 

CLK0,CLK1 Clock 

Input 

CKE0,CKE1 

Clock Enable Input 

/CS0,/CS1 

Chip Select Input 

/RAS 

Row address strobe 

/CAS 

Column address strobe 

/WE Write 

Enable 

DQM0~7 DQM 

Vcc Power 

Supply 

Vss Ground 

SDA 

Serial Address / Data I/O 

SCL Serial 

Clock 

NC No 

Connection