Справочник Пользователя для Dataram 2GB DDR3 DIMM DTM64332B
Модели
DTM64332B
DTM64332B
2GB - 240-Pin 2Rx8 Registered ECC LV DDR3 DIMM
Document 06494, Revision A, 04-Aug-11, Dataram Corporation
2011
Page 1
Features
Description
240-pin JEDEC-compliant DIMM, 133.35 mm wide by 30 mm high
Operating Voltage: VDD = VDDQ = +1.35V (1.283V to 1.45V)
Backward-compatible to VDD = VDDQ = +1.5V ±0.075V
On-board I2C temperature sensor with integrated serial presence-detect
(SPD) EEPROM
(SPD) EEPROM
Data Transfer Rate: 10.6 Gigabytes/sec
Data Bursts: 8 and burst chop 4 mode
ZQ Calibration for Output Driver and On-Die Termination (ODT)
Programmable ODT / Dynamic ODT during Writes
Programmable CAS Latency: 6, 7, 8, and 9
Bi-Directional Differential Data Strobe signals
SDRAM Addressing (Row/Col/Bank): 14/10/3
DTM64332B is a registered 256Mx72 memory
module, which conforms to JEDEC's DDR3L,
PC3L-10600 standard. The assembly is Dual-
Rank. Each Rank is comprised of nine 128Mx8
DDR3 Samsung SDRAMs. One 2K-bit EEPROM
is used for Serial Presence Detect and a
combination register/PLL, with Address and
Command Parity, is also used.
Both output driver strength and input termination
impedance are programmable to maintain signal
integrity on the I/O signals in a Fly-by topology.
A thermal sensor accurately monitors the DIMM
module and can prevent exceeding the maximum
operating temperature of 95C.
module, which conforms to JEDEC's DDR3L,
PC3L-10600 standard. The assembly is Dual-
Rank. Each Rank is comprised of nine 128Mx8
DDR3 Samsung SDRAMs. One 2K-bit EEPROM
is used for Serial Presence Detect and a
combination register/PLL, with Address and
Command Parity, is also used.
Both output driver strength and input termination
impedance are programmable to maintain signal
integrity on the I/O signals in a Fly-by topology.
A thermal sensor accurately monitors the DIMM
module and can prevent exceeding the maximum
operating temperature of 95C.
Fully RoHS Compliant
Pin Configuration
Pin Description
Front Side
Back Side
Name
Function
1 V
REFDQ
31 DQ25
61 A2
91 DQ41
121 V
SS
151 V
SS
181 A1
211 V
SS
CB[7:0]
Data Check Bits
2 V
SS
32 V
SS
62 V
DD
92 V
SS
122 DQ4
152 DM3
182 V
DD
212 DM5
DQ[63:0]
Data Bits
3 DQ0
33 /DQS3
63 CK1*
93 /DQS5
123 DQ5
153 /TDQS12 183 V
DD
213 /TDQS14
DQS[8:0], /DQS[8:0]
Differential Data Strobes
4 DQ1
34 DQS3
64 /CK1*
94 DQS5
124 V
SS
154 V
SS
184 CK0
214 V
SS
DM[8:0]
Data Mask
5 V
SS
35 V
SS
65 V
DD
95 V
SS
125 DM0
155 DQ30
185 /CK0
215 DQ46
/TDQS[17:9]
Termination Data Strobes
6 /DQS0 36 DQ26
66 V
DD
96 DQ42
126 /TDQS9 156 DQ31
186 V
DD
216 DQ47
CK[1:0], /CK[1:0]
Differential Clock Inputs
7 DQS0 37 DQ27
67 V
REFCA
97 DQ43
127 V
SS
157 V
SS
187 /Event
217 V
SS
CKE[1:0]
Clock Enables
8 V
SS
38 V
SS
68 P
AR
_I
N
98 V
SS
128 DQ6
158 CB4
188 A0
218 DQ52
/CAS
Column Address Strobe
9 DQ2
39 CB0
69 VDD
99 DQ48
129 DQ7
159 CB5
189 V
DD
219 DQ53
/RAS
Row Address Strobe
10 DQ3
40 CB1
70 A10/AP 100 DQ49
130 V
SS
160 V
SS
190 BA1
220 V
SS
/S[3:0]
Chip Selects
11 V
SS
41 V
SS
71 BA0
101 V
SS
131 DQ12
161 DM8
191 V
DD
221 DM6
/WE
Write Enable
12 DQ8
42 /DQS8
72 V
DD
102 /DQS6
132 DQ13
162 /TTDQS17 192 /RAS
222 /TDQS15
A[15:0]
Address Inputs
13 DQ9
43 DQS8
73 /WE
103 DQS6
133 V
SS
163 V
SS
193 /S0
223 V
SS
BA[2:0]
Bank Addresses
14 V
SS
44 V
SS
74 /CAS
104 V
SS
134 DM1
164 CB6
194 V
DD
224 DQ54
ODT[1:0]
On Die Termination Inputs
15 /DQS1 45 CB2
75 V
DD
105 DQ50
135 /TDQS10 165 CB7
195 ODT0
225 DQ55
SA[2:0]
SPD Address
16 DQS1 46 CB3
76 /S1
106 DQ51
136 V
SS
166 V
SS
196 A13
226 V
SS
SCL
SPD Clock Input
17 V
SS
47 V
SS
77 ODT1
107 V
SS
137 DQ14
167 NC (TEST) 197 V
DD
227 DQ60
SDA
SPD Data Input/Output
18 DQ10 48 V
TT
78 V
DD
108 DQ56
138 DQ15
168 /RESET
198 /S3, NC* 228 DQ61
V
SS
Ground
19 DQ11 49 V
TT
79 /S2, NC* 109 DQ57
139 V
SS
169 CKE1
199 V
SS
229 V
SS
V
DD
Power
20 V
SS
50 CKE0
80 V
SS
110 V
SS
140 DQ20
170 V
DD
200 DQ36
230 DM7
V
DDSPD
SPD EEPROM Power
21 DQ16 51 V
DD
81 DQ32
111 /DQS7
141 DQ21
171 A15
201 DQ37
231 /TDQS16
V
REFDQ
Reference Voltage for DQ
22 DQ17 52 BA2
82 DQ33
112 DQS7
142 V
SS
172 A14
202 V
SS
232 V
SS
V
REFCA
Reference Voltage for CA
23 V
SS
53 /E
RR
_O
UT
83 V
SS
113 V
SS
143 DM2
173 V
DD
203 DM4
233 DQ62
V
TT
Termination Voltage
24 /DQS2 54 V
DD
84 /DQS4
114 DQ58
144 /TDQS11 174 A12/ /BC 204 /TQDS13 234 DQ63
/Event
Temperature Sensing
25 DQS2 55 A11
85 DQS4
115 DQ59
145 V
SS
175 A9
205 V
SS
235 V
SS
NC
No Connection
26 V
SS
56 A7
86 V
SS
116 V
SS
146 DQ22
176 V
DD
206 DQ38
236 V
DDSPD
27 DQ18 57 V
DD
87 DQ34
117 SA0
147 DQ23
177 A8
207 DQ39
237 SA1
28 DQ19 58 A5
88 DQ35
118 SCL
148 V
SS
178 A6
208 V
SS
238 SDA
29 V
SS
59 A4
89 V
SS
119 SA2
149 DQ28
179 V
DD
209 DQ44
239 V
SS
30 DQ24 60 V
DD
90 DQ40
120 V
TT
150 DQ29
180 A3
210 DQ45
240 V
TT
*
Not used
Identification
DTM64332B 256Mx72
2GB 2Rx8 PC3L-10600R-9-11-B1
Performance range
Clock / Module Speed / CL-t
2GB 2Rx8 PC3L-10600R-9-11-B1
Performance range
Clock / Module Speed / CL-t
RCD
-t
RP
667 MHz / PC3L-10600 / 9-9-9
533 MHz / PC3L-8500 / 8-8-8
533 MHz / PC3L-8500 / 7-7-7
400 MHz / PC3L-6400 / 6-6-6
533 MHz / PC3L-8500 / 8-8-8
533 MHz / PC3L-8500 / 7-7-7
400 MHz / PC3L-6400 / 6-6-6