Техническая Спецификация для Freescale Semiconductor Tower System Kit for MC9S08PT60 Series TWR-S08PT60-KIT TWR-S08PT60-KIT

1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic

Solid State Surface Mount Devices.

MSL

Moisture sensitivity level

—

3

—

1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic

Solid State Surface Mount Devices.

V

HBM

Electrostatic discharge voltage, human body model

-4000

+4000

V

V

CDM

Electrostatic discharge voltage, charged-device model

-500

+500

V

I

LAT

Latch-up current at ambient temperature of 105°C

-100

+100

mA

1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human Body

Model (HBM).

2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for

Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.

Absolute maximum ratings are stress ratings only, and functional operation at the
maxima is not guaranteed. Stress beyond the limits specified in below table may affect
device reliability or cause permanent damage to the device. For functional operating
conditions, refer to the remaining tables in this document.

This device contains circuitry protecting against damage due to high static voltage or
electrical fields; however, it is advised that normal precautions be taken to avoid
application of any voltages higher than maximum-rated voltages to this high-impedance
circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate
logic voltage level (for instance, either V

SS

 or V

DD

) or the programmable pullup resistor

associated with the pin is enabled.

V

DD

Supply voltage

–0.3

5.8

V

I

DD

Maximum current into V

DD

—

120

mA

6

Freescale Semiconductor, Inc.