Техническая Спецификация для Freescale Semiconductor Tower System Eval Kit for MC9S12GN32 TWR-S12GN32-KIT TWR-S12GN32-KIT
Модели
TWR-S12GN32-KIT
MC9S12G Family Reference Manual, Rev.1.23
Freescale Semiconductor
1139
Chapter 31
240 KByte Flash Module (S12FTMRG240K2V1)
240 KByte Flash Module (S12FTMRG240K2V1)
31.1
Introduction
•
•
4Kbytes of EEPROM memory
The Flash memory is ideal for single-supply applications allowing for field reprogramming without
requiring external high voltage sources for program or erase operations. The Flash module includes a
memory controller that executes commands to modify Flash memory contents. The user interface to the
memory controller consists of the indexed Flash Common Command Object (FCCOB) register which is
written to with the command, global address, data, and any required command parameters. The memory
controller must complete the execution of a command before the FCCOB register can be written to with a
new command.
requiring external high voltage sources for program or erase operations. The Flash module includes a
memory controller that executes commands to modify Flash memory contents. The user interface to the
memory controller consists of the indexed Flash Common Command Object (FCCOB) register which is
written to with the command, global address, data, and any required command parameters. The memory
controller must complete the execution of a command before the FCCOB register can be written to with a
new command.
CAUTION
A Flash word or phrase must be in the erased state before being
programmed. Cumulative programming of bits within a Flash word or
phrase is not allowed.
programmed. Cumulative programming of bits within a Flash word or
phrase is not allowed.
Table 31-1. Revision History
Revision
Number
Revision
Date
Description of Changes
V01.06
23 Jun 2010
Updated description of the commands RD1BLK, MLOADU and MLOADF
V01.07
20 aug 2010
Updated description of the commands RD1BLK, MLOADU and MLOADF
Rev.1.23
31 Jan 2011
Updated description of protection on