Техническая Спецификация для Freescale Semiconductor Tower System Eval Kit for MC9S12GN32 TWR-S12GN32-KIT TWR-S12GN32-KIT

1184

Freescale Semiconductor

The Program EEPROM operation programs one to four previously erased words in the EEPROM block.
The Program EEPROM operation will confirm that the targeted location(s) were successfully programmed
upon completion.

A Flash word must be in the erased state before being programmed.
Cumulative programming of bits within a Flash word is not allowed.

Upon clearing CCIF to launch the Program EEPROM command, the user-supplied words will be
transferred to the Memory Controller and be programmed if the area is unprotected. The CCOBIX index
value at Program EEPROM command launch determines how many words will be programmed in the
EEPROM block. The CCIF flag is set when the operation has completed.

The Erase EEPROM Sector operation will erase all addresses in a sector of the EEPROM block.

000

0x11

Global address [17:16] to

identify the EEPROM block

001

Global address [15:0] of word to be programmed

010

Word 0 program value

011

Word 1 program value, if desired

100

Word 2 program value, if desired

101

Word 3 program value, if desired

FSTAT

ACCERR

Set if CCOBIX[2:0] < 010 at command launch

Set if CCOBIX[2:0] > 101 at command launch

Set if command not available in current mode (see

)

Set if an invalid global address [17:0] is supplied

Set if a misaligned word address is supplied (global address [0] != 0)

Set if the requested group of words breaches the end of the EEPROM block

FPVIOL

Set if the selected area of the EEPROM memory is protected

MGSTAT1

Set if any errors have been encountered during the verify operation

MGSTAT0

Set if any non-correctable errors have been encountered during the verify
operation