Техническая Спецификация для Freescale Semiconductor Tower System Eval Kit for MC9S12GN32 TWR-S12GN32-KIT TWR-S12GN32-KIT

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Electrical Characteristics
MC9S12G Family Reference Manual, Rev.1.23
Freescale Semiconductor
1201
A.2
I/O Characteristics
This section describes the characteristics of all I/O pins except EXTAL, XTAL, TEST, and supply pins.
1
The values for thermal resistance are achieved by package simulations
2
Per JEDEC JESD51-2 with the single layer board (JESD51-3) horizontal.J
3
Per JEDEC JESD51-6 with the board (JESD51-7) horizontal.
4
.Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8.  Board temperature is measured in
simulation on the top surface of the board near the package.
5
Thermal resistance between the die and the case top surface as measured in simulation by the cold plate method (MIL SPEC-883
Method 1012.1).
6
Thermal characterization parameter indicating the temperature difference between package top and the junction temperature per
JEDEC JESD51-2.
Ψ
JT
 is a useful value to use to estimate junction temperature in a steady state customer enviroment.
Table A-6.  3.3-V I/O Characteristics (Junction Temperature From –40
°C To +150°C)
Conditions are 3.15 V < V
DD35
< 3.6 V junction temperature from –40
°C to +150°C, unless otherwise noted
I/O Characteristics for all I/O pins except EXTAL, XTAL,TEST and supply pins.
Num C
Rating
Symbol
Min
Typ
Max
Unit
1
P Input high voltage
V
IH
0.65*V
DD35
V
2
T Input high voltage
V
IH
V
DD35
+0.3
V
3
P Input low voltage
V
IL
0.35*V
DD35
V
4
T Input low voltage
V
IL
V
SS35
 – 0.3
V
5
C Input hysteresis
V
HYS
0.06*V
DD35
0.3*V
DD35
mV
6
P
Input leakage current (pins in high impedance input
mode)
1
 Vin = VDD35 or VSS35
+125
°C to < T
J
 < 150
°C
+105
°C to < T
J
 < 125
°
–40
°C to < T
J
 < 105
°C
1
Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for each
8
°C to 12 C° in the temperature range from 50°C to 125°C.
I
in
-1
-0.5
-0.4


1
0.5
0.4
µA
7
P Output high voltage (pins in output mode)
IOH = –1.75 mA
V
OH
V
DD35
-0.4
V
8
C Output low voltage (pins in output mode)
IOL = +1.75 mA
V
OL
0.4
V
9
P Internal pull up device current
V
IH
 min > input voltage > V
IL
 max
I
PUL
-1
 –70
µA
10
P Internal pull down device current
V
IH
 min > input voltage > V
IL
 max
I
PDH
1
70
µA
11
D Input capacitance
C
in
7
pF
12
T Injection current
2
Single pin limit
Total device limit, sum of all injected currents
2
Refer to
 for more details
I
ICS
I
ICP
–2.5
–25
2.5
25
mA