Техническая Спецификация для Freescale Semiconductor Tower System Eval Kit for MC9S12GN32 TWR-S12GN32-KIT TWR-S12GN32-KIT
Модели
TWR-S12GN32-KIT
32 KByte Flash Module (S12FTMRG32K1V1)
MC9S12G Family Reference Manual, Rev.1.23
Freescale Semiconductor
829
•
Single bit fault correction and double bit fault detection within a 32-bit double word during read
operations
operations
•
Automated program and erase algorithm with verify and generation of ECC parity bits
•
Fast sector erase and phrase program operation
•
Ability to read the P-Flash memory while programming a word in the EEPROM memory
•
Flexible protection scheme to prevent accidental program or erase of P-Flash memory
25.1.2.2
EEPROM Features
•
1 Kbyte of EEPROM memory composed of one 1 Kbyte Flash block divided into 256 sectors of 4
bytes
bytes
•
Single bit fault correction and double bit fault detection within a word during read operations
•
Automated program and erase algorithm with verify and generation of ECC parity bits
•
Fast sector erase and word program operation
•
Protection scheme to prevent accidental program or erase of EEPROM memory
•
Ability to program up to four words in a burst sequence
25.1.2.3
Other Flash Module Features
•
No external high-voltage power supply required for Flash memory program and erase operations
•
Interrupt generation on Flash command completion and Flash error detection
•
Security mechanism to prevent unauthorized access to the Flash memory
25.1.3
Block Diagram
The block diagram of the Flash module is shown in
.