Техническая Спецификация для Linear Technology LTC4364DE-2 Demoboard: 12V Surge Stopper with Ideal Diode, Auto Retry DC2027A-B DC2027A-B

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LTC4364-1/LTC4364-2
7
436412f
PIN FUNCTIONS
DGATE: Diode Controller Gate Drive Output. When the load 
current creates more than 30mV of drop across the MOSFET, 
the DGATE pin is pulled high by an internal charge pump 
current source and clamped to 12V above the SOURCE pin. 
When the load current is small, the DGATE pin is actively 
driven to maintain 30mV across the MOSFET. If reverse 
current develops, a 130mA fast pull-down circuit quickly 
connects the DGATE pin to the SOURCE pin, turning off 
the MOSFET. Connect to SOURCE or leave open if unused.
ENOUT: Enable Output. An open-drain output that goes 
high impedance when the voltage at the OUT pin is above 
(V
CC
 − 0.7V), indicating the external MOSFETs are fully 
on. The state of the pin is latched and resets when the 
OUT pin drops below 2.2V. The internal FET is capable of 
sinking up to 2mA and can withstand up to 80V. Connect 
to GND if unused.
Exposed Pad (DE Package Only): Exposed pad may be 
left open or connected to device ground (GND).
FB: Voltage Regulator Feedback Input. Connect this pin to 
the resistive divider connected between the OUT pin and 
ground. During an overvoltage condition, the HGATE pin 
is controlled to maintain 1.25V at the FB pin. Connect to 
GND to disable the overvoltage clamp.
FLT: Fault Output. An open-drain output that pulls low 
after the TMR pin reaches the warning threshold of 1.25V. 
It indicates the pass device controlled by the HGATE pin 
is about to turn off because either the supply voltage has 
stayed at an elevated level for an extended period of time 
(overvoltage fault) or the device is in an overcurrent con-
dition (overcurrent fault). The internal FET is capable of 
sinking up to 2mA and can withstand up to 80V. Connect 
to GND if unused.
GND: Device Ground.
HGATE: Surge Stopper Gate Drive Output. The HGATE pin 
is pulled up by an internal charge pump current source and 
clamped to 12V above the SOURCE pin. Both voltage and 
current amplifiers control the HGATE pin to regulate the 
output voltage and limit the current through the MOSFET.
OUT: Output Voltage Sense Input. This pin senses the 
voltage at the drain of the external N-channel MOSFET 
connected to the DGATE pin. The voltage difference 
between V
CC
 and OUT sets the fault timer current. When 
this difference drops below 0.7V, the ENOUT pin goes 
high impedance.
OV: Overvoltage Comparator Input. When OV is above 
its threshold of 1.25V, the fault retry function is inhibited. 
When OV falls below its threshold, the HGATE pin is al-
lowed to turn back on when fault conditions are cleared. At 
power-up, an OV voltage higher than its threshold blocks 
turn-on of the external N-channel MOSFET controlled by 
the HGATE pin (see Applications Information). Connect 
to GND if unused. 
SENSE: Current Sense Input. Connect this pin to the input 
side of the current sense resistor. The current limit circuit 
controls the HGATE pin to limit the sense voltage between 
the SENSE and OUT pins to 50mV if OUT is above 2.5V. 
When OUT drops below 1.5V, the sense voltage is reduced 
to 25mV for additional protection during an output short. 
The sense amplifier also starts a current source to charge 
up the TMR pin. The voltage difference between SENSE 
and OUT must be limited to less than 30V. Connect to 
OUT if unused.
SHDN: Shutdown Control Input. Pulling the SHDN pin 
below 0.5V shuts off the LTC4364 and reduces the V
CC
 pin 
current to 10μA. Pull this pin above 2.2V or disconnect it 
to allow the internal current source to turn the part back 
on. When left open, the SHDN voltage is internally clamped 
to 4V. The leakage current to ground at the pin should be 
limited to no more than 1μA if no pull-up device is used to 
turn the part on. The SHDN pin can be pulled up to 100V 
or below GND by 40V without damage.
SOURCE: Common Source Input and Gate Drive Return. 
Connect this pin directly to the sources of the external 
back-to-back N-channel MOSFETs. SOURCE is the anode 
of the ideal diode and the voltage sensed between this pin 
and the SENSE pin is used to control the source-drain 
voltage across the N-channel MOSFET (forward voltage 
of the ideal diode).