Техническая Спецификация для On Semiconductor NCL30000 Evaluation Board NCL30000LED1GEVB NCL30000LED1GEVB
Модели
NCL30000LED1GEVB
NCL30000
http://onsemi.com
7
TYPICAL CHARACTERISTICS
Figure 3. Overvoltage Detect Threshold vs.
Junction Temperature
Figure 4. Overvoltage Hysteresis vs. Junction
Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
100
75
50
25
0
−25
−50
105
106
107
100
75
25
0
−25
−50
40
50
60
70
80
V
OV
P
/V
REF
, OVER
VOL
TAGE DETECT
THRESHOLD (%)
V
O
VP(
HYS)
, OVER
VOL
TAGE HYSTER-
ESIS (mV)
125
Figure 5. Undervoltage Detect Threshold vs.
Junction Temperature
Figure 6. MFP Pin Internal Pull−Down Resistor
vs. Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
125
100
75
50
25
0
−25
−50
0.300
0.305
0.315
0.320
0.325
125
100
75
50
25
0
−25
−50
0
1
2
6
7
V
UVP
, UNDER
VOL
TAGE DETECT THRESHOLD (V)
R
MFP
, FEEDBACK PIN INTERNAL PULL
−
DOWN RESIST
OR (M
W
)
0.310
Figure 7. Reference Voltage vs. Junction
Temperature
T
J
, JUNCTION TEMPERATURE (C)
125
100
75
50
25
0
−25
−50
2.46
2.47
2.48
2.49
2.50
2.52
2.53
2.54
V
REF
, REFERENCE VOL
TAGE (V)
50
125
3
4
5
2.51