Техническая Спецификация для Fairchild Semiconductor N/A BC557BTF
Модели
BC557BTF
BC556 / BC557 / BC558 / BC559 / BC560 —
PN
P Epit
axial Silicon
T
ra
n
sis
tor
tor
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
h
FE
Classification
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
BC556
-80
V
BC557 / BC560
-50
BC558 / BC559
-30
V
CEO
Collector-Emitter Voltage
BC556
-65
V
BC557 / BC560
-45
BC558 / BC559
-30
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current (DC)
-100
mA
P
C
Collector Power Dissipation
500
mW
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature Range
-65 to +150
°C
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-Off Current
V
CB
= -30 V, I
E
= 0
-15
nA
h
FE
DC Current Gain
V
CE
= -5 V, I
C
= -2 mA
110
800
V
CE
(sat)
Collector-Emitter Saturation
Voltage
Voltage
I
C
= -10 mA, I
B
= -0.5 mA
-90
-300
mV
I
C
= -100 mA, I
B
= -5 mA
-250
-650
V
BE
(sat)
Collector-Base Saturation Voltage
I
C
= -10 mA, I
B
= -0.5 mA
-700
mV
I
C
= -100 mA, I
B
= -5 mA
-900
V
BE
(on)
Base-Emitter On Voltage
V
CE
= -5 V, I
C
= -2 mA
-600
-660
-750
mV
V
CE
= -5 V, I
C
= -10 mA
-800
f
T
Current Gain Bandwidth Product
V
CE
= -5 V, I
C
= -10 mA,
f = 10 MHz
150
MHz
C
ob
Output Capacitance
V
CB
= -10 V, I
E
= 0, f = 1 MHz
6
pF
NF
Noise
Figure
Figure
BC556 / BC557 / BC558 V
CE
= -5 V, I
C
= -200
μA,
f = 1 kHz, R
G
= 2 k
Ω
2
10
dB
BC559 / BC560
1
4
BC559
V
CE
= -5 V, I
C
= -200
μA,
R
G
= 2 k
Ω, f = 30 to 15000 MHz
1.2
4.0
BC560
1.2
2.0
Classification
A
B
C
h
FE
110 ~ 220
200 ~ 450
420 ~ 800