Техническая Спецификация для Fairchild Semiconductor N/A BCP52
Модели
BCP52
BCP52 — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BCP52 Rev. 1.1.0
3
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain vs.
Collector Current
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base-Emitter On Voltage vs.
Collector Current
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
Figure 6.
Collector-Base Capacitance
vs.
Collector-Base Voltage
0.01
0.1
1
0
100
200
300
400
I - COLLECTOR CURRENT (A)
h
-
TY
P
IC
A
L P
U
LS
E
D
C
U
R
R
E
N
T
G
A
IN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
0.01
0.1
1
1.5
0
0.1
0.2
0.3
0.4
0.5
0.6
I - COLLE CTOR CURRENT (A)
V
-
C
O
LL
E
C
TO
R
-E
M
ITTE
R
V
O
LT
A
G
E
(
V
)
C
ESA
T
C
β = 10
125 °C
- 40 °C
25 °C
1
10
100
1000
0.4
0.6
0.8
1
I - COLLECTOR CURRENT ( mA)
V
-
B
A
S
E
-E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
BE
S
A
T
C
β = 10
125 °C
- 40 °C
25 °C
1
10
100
1000
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-E
M
IT
T
E
R
O
N
V
O
L
TA
G
E
(
V
)
BE
(O
N)
125 °C
- 40 °C
25 °C
C
V = 5V
CE
25
50
75
100
125
150
0.1
1
10
100
T - AM BIENT TE MPERATURE ( C)
I
- C
O
L
L
E
CT
O
R
CU
RRE
NT
(n
A)
A
V = 40V
CB
°
CB
O
0
4
8
12
16
20
24
28
0
10
20
30
40
V - COLLECTOR-BASE VOLTAGE (V)
-
CO
LL
E
C
T
O
R
-BA
SE
C
A
PAC
IT
A
N
C
E
(
p
F
)
CB
obo
f = 1.0 MHz