Техническая Спецификация для Fairchild Semiconductor N/A BC80725MTF
Модели
BC80725MTF
©2002 Fairchild Semiconductor Corporation
BC807/
BC808
Rev. A2, August 2002
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. Static Characteristic
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage
Figure 6. Input Output Capacitance
-0
-1
-2
-3
-4
-5
-0
-100
-200
-300
-400
-500
P
T
= 600m
W
I
B
= -
3.0
mA
I
B
= -
2.0
mA
I
B
= -
3.5
mA
I
B
= - 1.0mA
I
B
= - 1.
5mA
I
B
= - 0.5mA
I
B
= -
4.0
mA
I
B
= -
2.5
mA
I
B
= -
4.5
mA
I
B
= -
5.0
mA
I
B
= 0
I
C
[m
A],
COL
L
ECT
O
R
CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0
-10
-20
-30
-40
-50
-0
-4
-8
-12
-16
-20
P
T
= 60
0m
W
I
B
= -
80
µ
A
I
B
= -
70
µ
A
I
B
= -
60
µ
A
I
B
= -
50
µ
A
I
B
= -
40
µ
A
I
B
= - 3
0
µ
A
I
B
= - 20
µ
A
I
B
= - 10
µ
A
I
B
= 0
I
C
[m
A]
, CO
L
L
E
CT
OR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0.1
-1
-10
-100
-1000
1
10
100
1000
PULSE
- 1.0V
V
CE
= - 2.0V
h
FE
, DC C
URRENT
GAI
N
I
C
[mA], COLLECTOR CURRENT
-0.1
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
I
C
= 10 I
B
PULSE
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t),
V
CE
(s
at)
[V
], S
A
T
URA
T
ION
V
O
LT
A
G
E
I
C
[mA], COLLECTOR CURRENT
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-0.1
-1
-10
-100
-1000
V
CE
= -1V
PULSE
I
C
[m
A
], CO
LL
E
C
T
O
R CUR
RE
NT
V
BE
[V], BASE-EMITTER VOLTAGE
-0.1
-1
-10
-100
1
10
100
C
ib
f = 1.0MHz
C
ob
C
ib
, C
ob
[p
F
], C
APAC
IT
AN
C
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
V
EB
[V], EMITTER-BASE VOLTAGE