Техническая Спецификация для Fairchild Semiconductor N/A KSD2012GTU
![Fairchild Semiconductor](https://files.manualsbrain.com/attachments/75c2f3f1f72fd26b2d7bca8a2c62daa4b533123c/common/fit/150/50/f54dbc3866ffd7365ad11d34b2835044b76e6a3975d6bffb2a5667c79486/brand_logo.gif)
Модели
KSD2012GTU
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD201
2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
60
V
V
CEO
Collector-Emitter Voltage
60
V
V
EBO
Emitter-Base Voltage
7
V
I
C
Collector Current
3
A
I
B
Base Current
0.3
A
P
C
Collector Power Dissipation (T
C
=25
°
C)
25
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= 50mA, I
B
= 0
60
V
I
CBO
Collector Cut-off Current
V
CB
= 60V, I
E
= 0
100
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= 7V, I
C
= 0
10
µ
A
h
FE1
h
FE2
DC Current Gain
V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 3A
100
20
320
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 2A, I
B
= 0.2A
0.4
1
V
V
BE
(on)
Base-Emitter ON Voltage
V
CE
= 5V, I
C
= 0.5A
0.7
1
V
f
T
Current Gain Bandwidth Product
V
CE
= 5V, I
C
= 0.5A
3
MHz
Classification
Y
G
h
FE1
100 ~ 200
150 ~ 320
KSD2012
Low Frequency Power Amplifier
• Complement to KSB1366
1
1.Base 2.Collector 3.Emitter
TO-220F