Техническая Спецификация для Fairchild Semiconductor N/A KSD363RTU
Модели
KSD363RTU
©2000 Fairchild Semiconductor International
KSD363
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collect-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating (On Horizonal
Deflection Output Circuit)
Figure 6. Power Derating
0
4
8
12
16
20
0
1
2
3
4
5
I
B
= 5mA
I
B
= 10mA
I
B
= 15mA
I
B
= 20mA
I
B
= 25mA
I
B
= 30mA
I
B
= 45mA
I
B
= 40mA
I
B
= 50mA
I
B
= 35mA
I
C
[A
],
CO
L
L
E
C
T
O
R
CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.01
0.1
1
10
10
100
1000
V
CE
= 5V
h
FE
, DC C
URRENT
GAI
N
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.01
0.1
1
10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t)
, V
CE
(s
a
t)
[V],
SA
T
U
R
A
T
IO
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
1
10
100
10
100
1000
f=1MHz
I
E
=0
C
ob
[pF
], CA
P
A
CI
T
A
NCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
0
50
100
150
200
250
300
350
400
0
5
10
15
5mAp-p
↓
↑
I
CP
[A
],
P
EAK CO
L
L
E
CT
O
R
CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
P
C
[W
], P
O
W
E
R
D
IS
S
IP
A
T
IO
N
T
C
[
o
C], CASE TEMPERATURE