Техническая Спецификация для Fairchild Semiconductor N/A KSE350STU
Модели
KSE350STU
©2000 Fairchild Semiconductor International
KSE
350
Rev. A1, December 2000
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area
Figure 4. Power Derating
-1
-10
-100
-1000
1
10
100
1000
V
CE
= 10V
h
FE
, DC C
URRENT
GAI
N
I
C
[A], COLLECTOR CURRENT
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
I
C
= 10I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
at)
, V
CE
(s
a
t)
[V]
, SATURAT
IO
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
-10
-100
-1000
-10
-100
-1000
-10000
500
µ
s
100
µ
s
1m
s
DC
I
C
[A], CO
L
L
E
C
T
O
R CUR
RENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
5
10
15
20
25
P
C
[W
], PO
W
E
R
D
ISS
IP
AT
IO
N
T
C
[
o
C], CASE TEMPERATURE