Техническая Спецификация для Fairchild Semiconductor N/A KSD882YSTU
Модели
KSD882YSTU
KSD882 — NPN Epit
axial Silicon
T
ransistor
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
KSD882 Rev. B
3
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Current Gain Bandwidth Product
Figure 5. Collector Output Capacitance
Figure 6. Safe Operating Area
0
4
8
12
16
20
0.0
0.4
0.8
1.2
1.6
2.0
I
B
= 2mA
I
B
= 1mA
I
B
= 3mA
I
B
= 4mA
I
B
= 5mA
I
B
= 6mA
I
B
= 9mA
I
B
= 8mA
I
B
= 10mA
I
B
= 7mA
I
C
[A
],
CO
L
L
E
CTO
R
CUR
RE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
1E-3
0.01
0.1
1
10
10
100
1000
V
CE
= 2V
h
FE
, D
C
C
URRE
NT
G
A
IN
I
C
[A], COLLECTOR CURRENT
1E-3
0.01
0.1
1
10
1E-3
0.01
0.1
1
10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t), V
CE
(s
at
)[V]
, S
A
TU
R
A
T
ION
VOLT
AGE
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
1
10
100
1000
V
CE
= 5V
f
T
(MH
z
), C
URR
EN
T G
A
IN
B
A
N
D
WI
DTH
P
R
O
DUC
T
I
C
[A], COLLECTOR CURRENT
1
10
100
10
100
1000
I
E
=0
f=1MHz
C
ob
[p
F]
, C
APA
CI
TA
NC
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
1
10
100
0.01
0.1
1
10
S/b
Li
mi
te
d
Dis
sipa
tion
Lim
ited
1m
s
10m
s
100
µ
s
I
C
MAX. (pulse)
I
C
MAX. (DC)
I
C
[A
],
COL
L
E
C
T
OR CURR
ENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE