Техническая Спецификация для Infineon Technologies N/A BCR 169 S PNP Case type SOT 363 I BCR169S
Модели
BCR169S
2007-08-02
3
BCR169...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter breakdown voltage
I
C
= 100 µA, I
B
= 0
V
(BR)CEO
50
-
-
V
Collector-base breakdown voltage
I
I
C
= 10 µA, I
E
= 0
V
(BR)CBO
50
-
-
Collector-base cutoff current
V
V
CB
= 40 V, I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
V
EB
= 5 V, I
C
= 0
I
EBO
-
-
100
nA
DC current gain
1)
I
C
= 5 mA, V
CE
= 5 V
h
FE
120
-
630
-
Collector-emitter saturation voltage
1)
I
C
= 10 mA, I
B
= 0.5 mA
V
CEsat
-
-
0.3
V
Input off voltage
I
I
C
= 100 µA, V
CE
= 5 V
V
i(off)
0.4
-
0.8
Input on voltage
I
I
C
= 2 mA, V
CE
= 0.3 V
V
i(on)
0.5
-
1.1
Input resistor
R
1
3.2
4.7
6.2
k
Ω
AC Characteristics
Transition frequency
I
Transition frequency
I
C
= 10 mA, V
CE
= 5 V, f = 100 MHz
f
T
-
200
-
MHz
Collector-base capacitance
V
V
CB
= 10 V, f = 1 MHz
C
cb
-
3
-
pF
1
Pulse test: t < 300µs; D < 2%