Техническая Спецификация для Infineon Technologies N/A SMBT 2222 A NPN Case type SOT 23 I SMBT2222A
Модели
SMBT2222A
2011-08-19
2
SMBT2222A/MMBT2222A
Electrical Characteristics
at T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0
V
(BR)CEO
40
-
-
V
Collector-base breakdown voltage
I
I
C
= 10 µA, I
E
= 0
V
(BR)CBO
75
-
-
Emitter-base breakdown voltage
I
I
E
= 10 µA, I
C
= 0
V
(BR)EBO
6
-
-
Collector-base cutoff current
V
V
CB
= 60 V, I
E
= 0
V
CB
= 60 V, I
E
= 0 , T
A
= 150 °C
I
CBO
-
-
-
-
-
-
0.01
10
µA
Emitter-base cutoff current
V
V
EB
= 3 V, I
C
= 0
I
EBO
-
-
10
nA
DC current gain
1)
I
C
= 100 µA, V
CE
= 10 V
I
C
= 1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 1 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
h
FE
35
50
75
50
50
75
50
100
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
-
-
Collector-emitter saturation voltage
1)
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
-
-
-
-
-
-
0.3
1
V
Base emitter saturation voltage
1)
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
V
BEsat
0.6
-
-
-
-
1.2
2
1
Pulse test: t < 300µs; D < 2%