Техническая Спецификация для Fairchild Semiconductor N/A KSD1408YTU
Модели
KSD1408YTU
©2000 Fairchild Semiconductor International
KSD140
8
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area
Figure 6. Power Derating
0
1
2
3
4
5
0.0
0.8
1.6
2.4
3.2
4.0
I
B
= 16
0m
A
I
B
= 60mA
I
B
= 100m
A
I
B
= 40mA
I
B
=
120m
A
I
B
= 80m
A
I
B
= 24
0m
A
I
B
= 20mA
I
B
= 20
0m
A
I
B
= 0mA
I
C
[A
], CO
LL
E
C
T
O
R
CU
RRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.001
0.01
0.1
1
10
1
10
100
1000
V
CE
= 5V
h
FE
, DC C
URRE
NT
G
A
IN
I
C
[A], COLLECTOR CURRENT
0.001
0.01
0.1
1
10
0.01
0.1
1
10
I
C
= 10 I
B
V
CE
(s
a
t)
[V],
SA
T
U
R
A
T
IO
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
0.0
0.4
0.8
1.2
1.6
0
1
2
3
4
V
CE
= 5V
I
C
[A], C
O
L
L
ECT
O
R CU
RRENT
V
BE
[V], BASE-EMITTER VOLTAGE
1
10
100
1000
0.1
1
10
100
V
CE
O
MA
X
100m
S
1S
1m
S
10ms
DC
I
C
max(pulse)
I
C
(max)
I
C
[A], CO
L
L
ECT
O
R CU
RRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
P
C
[W
], P
O
W
E
R
D
IS
S
IP
A
T
IO
N
T
C
[
o
C], CASE TEMPERATURE