Техническая Спецификация для Fairchild Semiconductor N/A KSC5502DTM
Модели
KSC5502DTM
KSC550
2D / KSC550
2DT — NPN T
riple
Diffus
ed Planar Silicon T
ransistor
© 2000 Fairchild Semiconductor Corporation
www.fairchildsemi.com
KSC5502D / KSC5502DT Rev. 1.1.0
3
Electrical Characteristics
Values are at T
C
= 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min
Typ.
Max.
Unit
t
fr
Diode Froward Recovery
Time (di/dt=10 A/
Time (di/dt=10 A/
μs)
I
F
= 0.2 A
650
ns
I
F
= 0.4 A
740
I
F
= 1 A
785
V
CE
(DSAT) Dynamic Saturation Voltage
I
C
= 0.4 A, I
B1
= 80 mA,
V
CC
= 300 V
at 1
μs
7.2
V
at 3
μs
1.8
I
C
= 1 A, I
B1
= 200 mA,
V
CC
= 300 V
at 1
μs
18.0
at 3
μs
6.0
Resistive Load Switching (D.C < 10%, Pulse Width = 20 s)
t
ON
Turn-On Time
I
C
= 0.4 A, I
B1
= 80 mA,
I
B2
= 0.2 A, V
CC
= 300 V,
R
L
= 750
Ω
T
C
= 25
°C
175
350
ns
T
C
= 125
°C
185
t
OFF
Turn-Off Time
T
C
= 25
°C
2.1
3.0
μs
T
C
= 125
°C
2.6
t
ON
Turn-On Time
I
C
= 1 A, I
B1
= 160 mA,
I
B2
= 160 mA,
V
CC
= 300 V,
R
L
= 300
Ω
T
C
= 25
°C
240
450
ns
T
C
= 125
°C
310
t
OFF
Turn-Off Time
T
C
= 25
°C
3.7
5.0
μs
T
C
= 125
°C
4.5
Inductive Load Switching (V
CC
= 15 V)
t
STG
Storage Time
I
C
= 0.4 A, I
B1
= 80 mA,
I
B2
= 0.2 A, V
Z
= 300 V,
L
C
= 200 H
T
C
= 25
°C
1.2
2.0
μs
T
C
= 125
°C
1.5
t
F
Fall Time
T
C
= 25
°C
90
200
ns
T
C
= 125
°C
65
t
C
Cross-Over Time
T
C
= 25
°C
185
350
ns
T
C
= 125
°C
145
t
STG
Storage Time
I
C
= 0.8 A, I
B1
= 160 mA,
I
B2
= 160 mA,
V
CC
= 300 V,
L
C
= 200 H
T
C
= 25
°C
3.30
4.50
μs
T
C
= 125
°C
3.75
t
F
Fall Time
T
C
= 25
°C
90
250
ns
T
C
= 125
°C
160
t
C
Cross-over Time
T
C
= 25
°C
300
600
ns
T
C
= 125
°C
570