Техническая Спецификация для Infineon Technologies N/A BC 857 B PNP Case type SOT 23 I(C) BC857B
Модели
BC857B
BC 856 ... BC 860
Semiconductor Group
2
Maximum Ratings
Parameter
Symbol
BC 856
Unit
Collector-emitter voltage
V
CE0
65
V
Collector-base voltage
V
CB0
80
Emitter-base voltage
V
EB0
Collector current
I
C
mA
Peak emitter current
I
EM
Total power dissipation,
T
S
= 71 ˚C
P
tot
mW
Junction temperature
T
j
˚C
Storage temperature range
T
stg
– 65 … + 150
Thermal Resistance
Junction - ambient
1)
R
th JA
≤
310
K/W
Peak collector current
I
CM
Peak base current
I
BM
BC 857
BC 860
BC 860
45
50
100
200
330
150
200
200
Values
BC 858
BC 859
BC 859
30
30
Collector-emitter voltage
V
CES
80
50
30
5
5
5
Junction - soldering point
R
th JS
≤
240
1)
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.