Техническая Спецификация для Infineon Technologies N/A BFN 24 NPN Case type SOT 23 I(C) 0 BFN24
Модели
BFN24
2011-12-19
1
BFN24, BFN26
1
2
3
NPN Silicon High-Voltage Transistors
• Suitable for video output stages in TV sets
and switching power supplies
and switching power supplies
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary type: BFN27 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
• Low collector-emitter saturation voltage
• Complementary type: BFN27 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
BFN24
BFN26
BFN26
FHs
FJs
FJs
1=B
1=B
1=B
2=E
2=E
2=E
3=C
3=C
3=C
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Parameter
Symbol
Value
Unit
Collector-emitter voltage
BFN24
BFN26
BFN24
BFN26
V
CEO
250
300
300
V
Collector-base voltage
BFN24
BFN26
BFN24
BFN26
V
CBO
250
300
300
Emitter-base voltage
V
EBO
6
Collector current
I
C
200
mA
Peak collector current, t
p
≤ 10 ms
I
CM
500
Base current
I
B
100
Peak base current
I
BM
200
Total power dissipation-
T
T
S
≤ 74 °C
P
tot
360
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150