Техническая Спецификация для Nxp Semiconductors BU2523DF BU Transistor NPN SOT 199 11A 800V BU2523DF
Модели
BU2523DF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523DF
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
Fig.3. Definition of anti-parallel diode V
fr
and t
fr
.
Fig.4. Switching times test circuit.
Fig.5. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 1 V
Fig.6. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 5 V
V
ICsat
I end
16 us
6.5 us
5 us
t
t
t
TRANSISTOR
DIODE
B
I C
I B
CE
+ 150 v nominal
adjust for ICsat
adjust for ICsat
Lc
Cfb
D.U.T.
LB
IBend
-VBB
Rbe
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
BU2523DF/X
0.01
0.1
1
10
100
1
10
100
VCE = 1 V
Ths = 25 C
Ths = 85 C
Ths = 85 C
hFE
IC / A
time
time
V
F
V
fr
V
F
I
F
fr
t
10%
5 V
I
F
BU2523DF/X
0.01
0.1
1
10
100
1
10
100
VCE = 5 V
Ths = 25 C
Ths = 85 C
Ths = 85 C
hFE
IC / A
September 1997
3
Rev 1.200