Техническая Спецификация для Nxp Semiconductors BU2720DF BU Transistor NPN SOT 199 10A 825V BU2720DF
Модели
BU2720DF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2720DF
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.3. Switching times waveforms.
Fig.4. Switching times definitions.
Fig.5. Switching times test circuit.
Fig.6. DC current gain. h
FE
= f (I
C
)
Parameter T
hs
(Low and high gain)
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
+ 150 v nominal
adjust for ICsat
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
IC
IB
VCE
ICsat
IBend
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
BU2720/22AF
0.01
0.1
1
10
100
1
10
100
Ths = 25 C
Ths = 85 C
VCE = 5 V
hFE
IC / A
September 1997
3
Rev 1.300