Техническая Спецификация для Fairchild Semiconductor N/A TIP142TTU
Модели
TIP142TTU
T
IP
1
4
0
T
/
T
IP
1
4
1
T
/
T
IP
1
4
2
T
—
N
N
P
N
E
p
ita
x
ia
l S
ili
c
o
n
D
a
rli
n
g
to
n
T
ra
n
s
is
to
r
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
TIP140T / TIP141T / TIP142T Rev. B2
2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
: TIP140T
: TIP141T
: TIP142T
: TIP141T
: TIP142T
I
C
= 30mA, I
B
= 0
60
80
80
100
V
V
V
V
V
I
CEO
Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
: TIP141T
: TIP142T
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
2
2
2
2
2
mA
mA
mA
mA
mA
I
CBO
Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
: TIP141T
: TIP142T
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
1
1
1
1
1
mA
mA
mA
mA
mA
I
EBO
Emitter Cut-off Current
V
BE
= 5V, I
C
= 0
2
mA
h
FE
DC Current Gain
V
CE
= 4V, I
C
= 5A
V
CE
=4V, I
C
= 10A
1000
500
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 5A, I
B
= 10mA
I
C
= 10A, I
B
= 40mA
2
3
3
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 10A, I
B
= 40mA
3.5
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
= 4V, I
C
= 10A
3
V
t
D
Delay Time
V
CC
= 30V, I
C
= 5A
I
B1
= 20mA
I
B2
= -20mA
R
L
= 6Ω
0.15
µs
t
R
Rise Time
0.55
µs
t
STG
Storage Time
2.5
µs
t
F
Fall Time
2.5
µs